three phase rectifier bridge psdm 33/05 i d25 = 35 a with igbt and fast recovery diode v dss = 500 v for braking system r ds(on) = 0.12 ? ? ? ? ? features ? high level of integration - only one power semiconductor module required ? isolation voltage 3000 v ? planar glass passivated chips ? ultrafast boost diode ? leads suitable for pc board soldering ? thermistor (optional) ? ul registered, e 148688 applications ? drive inverters with brake system advantages ? easy to mount with two screws ? space and weight savings ? high temperature and power cycling capability ? small and light weight ? 2 functions in one package powersem gmbh, walpersdorfer str. 53 d - 91126 schwabach phone: 09122 - 9764 - 0 fax: 09122 - 9764 - 20 eco-pac tm 2 ? 2005 powersem reserves the right to change limits, test conditions and dimensions data according to iec 60747 refer to a single diode unless otherwise stated preliminary data sheet v rsm v rrm type (v) (v) 600 500 psdm 33/05 mosfet symbol test conditions maximum ratings v dss t vj = 25 c to 150 c 500 v v dgr t vj = 25 c to 150 c, r gs = 10 ? 500 v v gs continuous 20 v i d t s = 85 c 24 a i d t s = 25 c 35 a i dm t s = 25 c, pulse width limited by t vj 95 a p d t s = 85 c 170 w i s v gs = 0 v, t s = 25 c 24 a i sm v gs = 0 v, t s = 25 c , pulse width limited by t vj 95 a symbol test conditions characteristic values t vj = 25 c, unless otherwise specified v dss v gs = 0 v, i d = 2ma min. 500 v v gs(th) v ds = 20 v, i d = 20 ma min. 2 v v gs(th) v ds = 20 v, i d = 20 ma max. 5 v i gss v gs = 20 v, v ds = 0 v max. 500 na i dss v ds = 500 v, v gs = 0 v max. 2 ma r ds(on) t vj = 25 c max. 0.12 ? r gint t vj = 25 c max. 1.5 ? g fs v ds = 15 v, i ds = 12 a typ. 30 s v ds i ds = 24 v, v gs = 0 v max. 1.5 v t d(on) v ds = 250 v, i ds = 12 a, v gs = 10 v max. 100 ns t d(off) zgen. = 1 ? , l-load max. 220 ns c iss typ. 8.5 nf c oss v ds = 25 v, f = 1 mhz, v gs = 0 v typ. 0.9 nf c rss typ. 0.3 nf q g v ds = 250 v, i d = 12 a, v gs = 10 v typ. 350 nc r thjh max. 0.38 k/w } } module symbol test conditions maximum ratings t vj -40...+150 c t jm 150 c t stg -40...+150 c v isol 50/60 hz t = 1 min 3000 v iisol 1 ma t = 1 s 3600 v m d mounting torque (m 4) 1.5-2.0 nm weight typ. 24 g ntc optional caution: these devices are sensitive to electrostatic discharge. users should observe proper esd handling precautions. l m x v c k g h 1 2 e
eco-pac tm 2 powersem gmbh, walpersdorfer str. 53 d - 91126 schwabach phone: 09122 - 9764 - 0 fax: 09122 - 9764 - 20 ? 2005 powersem reserves the right to change limits, test conditions and dimensions package style and outline dimensions in mm (1mm = 0.0394?) boost diode symbol test conditions maximum ratings v rrm 600 v i fav t s = 85 c, rectangular =0.5 33 a i fsm t vj = 45 c, t = 10 ms (50hz) 300 a t = 8.3 ms (60hz) 320 a t vj = 150 c, t = 10 ms (50hz) 260 a t = 8.3 ms (60hz) 280 a p t s = 85 c 36 w symbol test conditions characteristic values t vj = 25 c, unless otherwise specified v f i f = 22 a, t vj = 25 c max. 1.65 v t vj = 150 c max. 1.4 v i r v r = 600 v, t vj = 25 c max. 1.5 ma v r = 480 v, t vj = 25 c max. 0.25 ma t vj = 125 c max. 7 ma v t0 for power-loss calculations only max. 1.14 v r t t vj = 125 c max. 10 m ? i rm i f = 30 a, -di f /dt = 240 a/s max. 11 a v r = 350 v, t vj = 100 c typ. 10 a r thjh max. 1.8 k/w } rectifier diodes symbol test conditions maximum ratings v rrm 800 v i dav t s = 85 c, sinus 180 54 a i fsm t vj = 45 c, t = 10 ms (50hz) 300 a t = 8.3 ms (60hz) 320 a t vj = 150 c, t = 10 ms (50hz) 260 a t = 8.3 ms (60hz) 280 a symbol test conditions characteristic values t vj = 25 c, unless otherwise specified v f i f = 20 a, t vj = 25 c max. 1.4 v t vj = 125 c max. 1.4 v i r v r = 800 v, t vj = 25 c max. 0.25 ma v r = 640 v, t vj = 125 c max. 2 ma v t0 for power-loss calculations only max. 1.05 v r t t vj = 125 c max. 16 m ? r thjh max. 2.0 k/w d s creeping distance on surface 11.2 mm d a creeping distance in air 5.6 mm a max. allowable acceleration 50 m/s2 r 25 * ntc @ 25 c 470.000 ? module symbol test conditions characteristic values *ntc will be changed in future to 5.000 ? .
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